QS6J3TR
- Manufacturer ROHM Semiconductor
- Part Number QS6J3TR
- Description MOSFET 2P-CH 20V 1.5A
- Category MOSFET
Specifications
| Package | SOT-457T-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | P-Channel |
| Width | 1.6 mm |
| Vgs - Gate-Source Voltage | 12 V |
| Part # Aliases | QS6J3 |
| Fall Time | 12 ns |
| Mounting Style | SMD/SMT |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Brand | ROHM Semiconductor |
| Unit Weight | 0.000494 oz |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Transistor Type | 2 P-Channel |
| Id - Continuous Drain Current | 1.5 A |
| Length | 2.9 mm |
| Rds On - Drain-Source Resistance | 215 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 45 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | QS6J3 |
| Height | 0.85 mm |
| Packaging | |
| Typical Turn-On Delay Time | 10 ns |
| Pd - Power Dissipation | 1.25 W |
| Rise Time | 12 ns |
| Technology | Si |
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