QPD3601
- Manufacturer Qorvo
- Part Number QPD3601
- Description RF JFET Transistors 3.4-3.6GHz 50V 180 Watt GaN
- Category RF JFET Transistors
Specifications
| Package | NI400-2 |
| Packaging | Waffle |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 50 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | - 2.7 V |
| Moisture Sensitive | Yes |
| Part # Aliases | 1130556 |
| Mounting Style | SMD/SMT |
| Product Category | RF JFET Transistors |
| Maximum Drain Gate Voltage | 55 V |
| Brand | Qorvo |
| Shipping Restrictions | |
| Gain | 22 dB |
| Configuration | Single |
| Maximum Operating Temperature | + 85 C |
| Transistor Type | HEMT |
| Operating Temperature Range | - 40 C to + 85 C |
| Id - Continuous Drain Current | 360 mA |
| Output Power | 180 W |
| Operating Frequency | 3.4 GHz to 3.6 GHz |
| RoHS | Y |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Series | QPD |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 60.9 W |
| Technology | GaN SiC |
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