QPD2795
- Manufacturer Qorvo
- Part Number QPD2795
- Description RF JFET Transistors 2.5-2.7GHz 360W 48V Gain 22dB GaN
- Category RF JFET Transistors
Specifications
| Package | NI780-2 |
| Packaging | Waffle |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 48 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | - 2.7 V |
| Moisture Sensitive | Yes |
| Part # Aliases | 1130777 |
| Mounting Style | SMD/SMT |
| Product Category | RF JFET Transistors |
| Maximum Drain Gate Voltage | 55 V |
| Brand | Qorvo |
| Gain | 22 dB |
| Configuration | Dual |
| Maximum Operating Temperature | + 85 C |
| Transistor Type | HEMT |
| Operating Temperature Range | - 40 C to + 85 C |
| Id - Continuous Drain Current | 360 mA |
| Output Power | 364 W |
| Operating Frequency | 2.5 GHz to 2.7 GHz |
| RoHS | Y |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Series | QPD |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 83.5 W |
| Technology | GaN SiC |
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