QPD2793
- Manufacturer Qorvo
- Part Number QPD2793
- Description RF JFET Transistors 2.62-2.69GHz GaN 200W 48V
- Category RF JFET Transistors
Specifications
| Package | NI400-2 |
| Packaging | Tray |
| Min. Pack | 500 |
| Vds - Drain-Source Breakdown Voltage | - |
| Transistor Polarity | N-Channel |
| Application | Microcell Base Station, W-CDMA / LTE |
| Part # Aliases | 1130771 |
| Mounting Style | SMD/SMT |
| Product Category | RF JFET Transistors |
| Vgs - Gate-Source Breakdown Voltage | - |
| Maximum Drain Gate Voltage | - |
| Brand | Qorvo |
| Gain | 19 dB |
| Configuration | Single |
| Maximum Operating Temperature | - |
| Transistor Type | HEMT |
| Forward Transconductance - Min | - |
| Id - Continuous Drain Current | - |
| Output Power | 200 W |
| Operating Frequency | 2.62 GHz to 2.69 GHz |
| RoHS | Y |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Series | QPD |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | - |
| Technology | GaN SiC |
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