QPD2731SR
- Manufacturer Qorvo
- Part Number QPD2731SR
- Description RF JFET Transistors 110/200 Watt, 48 Volt, 2.5-2.7 GHz, GaN Asymmetric Doherty
- Category RF JFET Transistors
Specifications
| Package | NI780-4 |
| Packaging | Reel |
| Min. Pack | 100 |
| Transistor Polarity | N-Channel |
| Development Kit | QPD2731EVB1.0 |
| Moisture Sensitive | Yes |
| Mounting Style | SMD/SMT |
| Product Category | RF JFET Transistors |
| Maximum Drain Gate Voltage | 55 V |
| Brand | Qorvo |
| Shipping Restrictions | |
| Gain | 16.3 dB |
| Product Type | RF JFET Transistors |
| Maximum Operating Temperature | + 85 C |
| Transistor Type | HEMT |
| Output Power | 316 W |
| Operating Frequency | 2.5 GHz to 2.7 GHz |
| RoHS | Y |
| Configuration | Dual |
| Subcategory | Transistors |
| Minimum Operating Temperature | - 40 C |
| Technology | GaN SiC |
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