QPD2730
- Manufacturer Qorvo
- Part Number QPD2730
- Description RF JFET Transistors 2.575-2.635GHz 48V 110/220 Watt GaN
- Category RF JFET Transistors
Specifications
| Package | NI780-4 |
| Packaging | Waffle |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 48 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | - 2.7 V, - 4.75 V |
| Moisture Sensitive | Yes |
| Part # Aliases | 1131813 |
| Mounting Style | SMD/SMT |
| Product Category | RF JFET Transistors |
| Maximum Drain Gate Voltage | 55 V |
| Brand | Qorvo |
| Gain | 16 dB |
| Configuration | Dual |
| Maximum Operating Temperature | + 85 C |
| Transistor Type | HEMT |
| Operating Temperature Range | - 40 C to + 85 C |
| Id - Continuous Drain Current | 210 mA |
| Output Power | 36 W |
| Operating Frequency | 2.575 GHz to 2.635 GHz |
| RoHS | Y |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Series | QPD |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 18.6 W |
| Technology | GaN SiC |
Need pricing on QPD2730?
Tell us your quantity and target price. We reply the same business day.