QPD1025L
- Manufacturer Qorvo
- Part Number QPD1025L
- Description RF JFET Transistors 1-1.1GHz 1500 Watt Gain 22.9dB 65V
- Category RF JFET Transistors
Specifications
| Package | NI-1230-4 |
| Packaging | Tray |
| Min. Pack | 1 |
| Development Kit | QPD1025LEVB1 |
| Application | Avionics, IFF Transponders |
| Moisture Sensitive | Yes |
| Mounting Style | SMD/SMT |
| Product Category | RF JFET Transistors |
| Maximum Drain Gate Voltage | 225 V |
| Brand | Qorvo |
| Gain | 22.9 dB |
| Configuration | Dual Gate Dual Drain |
| Maximum Operating Temperature | + 85 C |
| Transistor Type | HEMT |
| Id - Continuous Drain Current | 28 A |
| Output Power | 1.5 kW |
| Operating Frequency | 1 GHz to 1.1 GHz |
| RoHS | Y |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Series | QPD |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 758 W |
| Technology | GaN SiC |
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