QPD1025
- Manufacturer Qorvo
- Part Number QPD1025
- Description RF MOSFET Transistors 1-1.1GHz 1800 Watt Gain 22.5dB 65V GaN
- Category RF MOSFET Transistors
Specifications
| Package | NI-1230-4 |
| Packaging | Tray |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 65 V |
| Transistor Polarity | Dual N-Channel |
| Vgs - Gate-Source Voltage | - 2.8 V |
| Moisture Sensitive | Yes |
| Type | RF Power MOSFET |
| Product Category | RF MOSFET Transistors |
| Brand | Qorvo |
| Number of Channels | 2 Channel |
| Gain | 22.5 dB |
| Product Type | RF MOSFET Transistors |
| Maximum Operating Temperature | + 85 C |
| Id - Continuous Drain Current | 28 A |
| Output Power | 1.862 kW |
| Operating Frequency | 1 GHz to 1.1 GHz |
| RoHS | Y |
| Subcategory | MOSFETs |
| Series | QPD |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 685 W |
| Technology | GaN SiC |
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