QPD1022SR
- Manufacturer Qorvo
- Part Number QPD1022SR
- Description RF JFET Transistors DC-12GHz 10W 32V GaN
- Category RF JFET Transistors
Specifications
| Package | QFN-16 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 32 V |
| Transistor Polarity | N-Channel |
| Development Kit | QPD1022EVB01 |
| Moisture Sensitive | Yes |
| Mounting Style | SMD/SMT |
| Product Category | RF JFET Transistors |
| Vgs - Gate-Source Breakdown Voltage | - 2.8 V |
| Brand | Qorvo |
| Gain | 24 dB |
| Product Type | RF JFET Transistors |
| Maximum Operating Temperature | + 85 C |
| Transistor Type | HEMT |
| Id - Continuous Drain Current | 610 mA |
| Output Power | 10 W |
| Operating Frequency | DC to 12 GHz |
| RoHS | Y |
| Subcategory | Transistors |
| Series | QPD1022 |
| Packaging | |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 13.8 W |
| Technology | GaN SiC |
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