QPD1019
- Manufacturer Qorvo
- Part Number QPD1019
- Description RF JFET Transistors 500 Watt, 50 Volt, 2.7 - 3.1 GHz, GaN RF IMFET
- Category RF JFET Transistors
Specifications
| Package | 17.4 mm x 24 mm x 4.31 mm |
| Min. Pack | 18 |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Transistor Polarity | N-Channel |
| Development Kit | QPD1019EVB01 |
| Moisture Sensitive | Yes |
| Product Category | RF JFET Transistors |
| Vgs - Gate-Source Breakdown Voltage | - 7 V to 2 V |
| Maximum Drain Gate Voltage | 55 V |
| Brand | Qorvo |
| Shipping Restrictions | |
| Gain | 16.3 dB |
| Configuration | Single |
| Maximum Operating Temperature | + 85 C |
| Transistor Type | HEMT |
| Id - Continuous Drain Current | 15 A |
| Operating Frequency | 2.9 GHz to 3.3 GHz |
| RoHS | Y |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Mounting Style | SMD/SMT |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 522 W |
| Technology | GaN SiC |
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