QPD1013SR
- Manufacturer Qorvo
- Part Number QPD1013SR
- Description RF JFET Transistors DC-2.7GHz 150W PAE 64.8%
- Category RF JFET Transistors
Specifications
| Package | DFN-6 |
| Min. Pack | 1 |
| Transistor Polarity | N-Channel |
| Development Kit | QPD1013EVB01 |
| Application | Military Radar, Jammers,Test Instrumentation,Wideband or Narrowband Amplifiers,Land Mobile and Military Radio Communications |
| Moisture Sensitive | Yes |
| Mounting Style | SMD/SMT |
| Product Category | RF JFET Transistors |
| Maximum Drain Gate Voltage | 65 V |
| Brand | Qorvo |
| Gain | 21.8 dB |
| Configuration | Single Triple Drain |
| Maximum Operating Temperature | + 85 C |
| Transistor Type | HEMT |
| Id - Continuous Drain Current | 1.7 A |
| Output Power | 178 W |
| Operating Frequency | 1.2 GHz to 2.7 GHz |
| RoHS | Y |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Packaging | |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 67 W |
| Technology | GaN SiC |
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