QPD1011SR
- Manufacturer Qorvo
- Part Number QPD1011SR
- Description RF JFET Transistors .03-1.2GHz 7W 50V GaN
- Category RF JFET Transistors
Specifications
| Package | SMD-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 50 V |
| Transistor Polarity | N-Channel |
| Development Kit | QPD1011EVB01 |
| Moisture Sensitive | Yes |
| Part # Aliases | QPD1011 |
| Mounting Style | SMD/SMT |
| Product Category | RF JFET Transistors |
| Vgs - Gate-Source Breakdown Voltage | 145 V |
| Maximum Drain Gate Voltage | 55 V |
| Brand | Qorvo |
| Gain | 21 dB |
| Product Type | RF JFET Transistors |
| Maximum Operating Temperature | + 85 C |
| Transistor Type | HEMT |
| Forward Transconductance - Min | - |
| Id - Continuous Drain Current | 1.46 A |
| Output Power | 8.7 W |
| Operating Frequency | 30 MHz to 1200 MHz |
| RoHS | Y |
| Subcategory | Transistors |
| Series | QPD1011 |
| Packaging | |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 13 W |
| Technology | GaN SiC |
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