QPD1010
- Manufacturer Qorvo
- Part Number QPD1010
- Description RF JFET Transistors DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN
- Category RF JFET Transistors
Specifications
| Package | QFN-16 |
| Packaging | Waffle |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 50 V |
| Transistor Polarity | N-Channel |
| Development Kit | QPD1010-EVB1 |
| Vgs th - Gate-Source Threshold Voltage | - 2.8 V |
| Moisture Sensitive | Yes |
| Part # Aliases | 1132873 |
| Mounting Style | SMD/SMT |
| Product Category | RF JFET Transistors |
| Vgs - Gate-Source Breakdown Voltage | 145 V |
| Brand | Qorvo |
| Unit Weight | 0.081130 oz |
| Gain | 24.7 dB |
| Configuration | Single |
| Maximum Operating Temperature | + 85 C |
| Transistor Type | HEMT |
| Operating Temperature Range | - 40 C to + 85 C |
| Id - Continuous Drain Current | 400 mA |
| Output Power | 11 W |
| Operating Frequency | 4 GHz |
| RoHS | Y |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Series | QPD |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 13.5 W |
| Technology | GaN SiC |
Need pricing on QPD1010?
Tell us your quantity and target price. We reply the same business day.