QPD1008L
- Manufacturer Qorvo
- Part Number QPD1008L
- Description RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN
- Category RF JFET Transistors
Specifications
| Package | NI-360 |
| Packaging | Tray |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 50 V |
| Transistor Polarity | N-Channel |
| Development Kit | QPD1008LPCB401 |
| Vgs th - Gate-Source Threshold Voltage | - 2.8 V |
| Moisture Sensitive | Yes |
| Mounting Style | Screw Mount |
| Product Category | RF JFET Transistors |
| Vgs - Gate-Source Breakdown Voltage | 145 V |
| Brand | Qorvo |
| Gain | 17.5 dB |
| Configuration | Single |
| Maximum Operating Temperature | + 85 C |
| Transistor Type | HEMT |
| Operating Temperature Range | - 40 C to + 85 C |
| Id - Continuous Drain Current | 4 A |
| Output Power | 162 W |
| Operating Frequency | 3.2 GHz |
| RoHS | Y |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Series | QPD |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 127 W |
| Technology | GaN SiC |
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