QPD1003
- Manufacturer Qorvo
- Part Number QPD1003
- Description RF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaN
- Category RF JFET Transistors
Specifications
| Package | RF-565 |
| Packaging | Tray |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 50 V |
| Transistor Polarity | N-Channel |
| Development Kit | QPD1003PCB401 |
| Vgs th - Gate-Source Threshold Voltage | - 2.8 V |
| Part # Aliases | 1131389 |
| Mounting Style | SMD/SMT |
| Product Category | RF JFET Transistors |
| Vgs - Gate-Source Breakdown Voltage | 145 V |
| Brand | Qorvo |
| Gain | 19.9 dB |
| Configuration | Single |
| Maximum Operating Temperature | + 85 C |
| Transistor Type | HEMT |
| Operating Temperature Range | - 40 C to + 85 C |
| Id - Continuous Drain Current | 15 A |
| Output Power | 540 W |
| Operating Frequency | 1.2 GHz to 1.4 GHz |
| RoHS | Y |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Series | QPD |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 370 W |
| Technology | GaN SiC |
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