QPD0060
- Manufacturer Qorvo
- Part Number QPD0060
- Description RF JFET Transistors DC-3.6GHz GaN 90W 48V
- Category RF JFET Transistors
Specifications
| Package | DFN-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | - |
| Development Kit | QPD0060PCB4B01 |
| Application | Microcell Base Station, W-CDMA / LTE |
| Part # Aliases | 1131037 |
| Mounting Style | SMD/SMT |
| Product Category | RF JFET Transistors |
| Vgs - Gate-Source Breakdown Voltage | - |
| Maximum Drain Gate Voltage | - |
| Brand | Qorvo |
| Gain | 16.2 dB |
| Configuration | Single |
| Maximum Operating Temperature | - |
| Forward Transconductance - Min | - |
| Id - Continuous Drain Current | - |
| Output Power | 90 W |
| Operating Frequency | 1.8 GHz to 3.8 GHz |
| RoHS | Y |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Series | QPD |
| Packaging | |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | - |
| Technology | GaN |
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