QH8MA2TCR
- Manufacturer ROHM Semiconductor
- Part Number QH8MA2TCR
- Description MOSFET 30V Nch+Pch Power MOSFET
- Category MOSFET
Specifications
| Package | TSMT-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel, P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 8.4 nC, 7.8 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | QH8MA2 |
| Fall Time | 5.7 ns, 8.5 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ROHM Semiconductor |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Forward Transconductance - Min | 1.4 S, 1.9 S |
| Id - Continuous Drain Current | 4.5 A, 3 A |
| Rds On - Drain-Source Resistance | 25 mOhms, 55 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 12 ns, 27.6 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 7.2 ns, 7.9 ns |
| Minimum Operating Temperature | - |
| Pd - Power Dissipation | 1.5 W |
| Rise Time | 8 ns, 16.8 ns |
| Technology | Si |
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