PUMX1,115
- Manufacturer Nexperia
- Part Number PUMX1,115
- Description Bipolar Transistors - BJT TRANS DOUBLE TAPE-7
- Category Bipolar Transistors - BJT
Specifications
| Package | TSSOP-6 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 5 V |
| Width | 1.35 mm |
| Part # Aliases | PUMX1 T/R |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | Nexperia |
| DC Current Gain hFE Max | 120 at 1 mA, 6 V |
| Unit Weight | 0.000212 oz |
| Collector- Emitter Voltage VCEO Max | 40 V |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Length | 2.2 mm |
| Qualification | AEC-Q101 |
| Maximum DC Collector Current | 0.1 A |
| RoHS | Y |
| Gain Bandwidth Product fT | 100 MHz |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Height | 1 mm |
| Packaging | |
| Collector- Base Voltage VCBO | 50 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 200 mW |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 120 |
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