PSMN8R5-100ESQ
- Manufacturer Nexperia
- Part Number PSMN8R5-100ESQ
- Description MOSFET PSMN8R5-100ES/I2PAK/STANDARD M
- Category MOSFET
Specifications
| Package | TO-262-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 111 nC |
| Fall Time | 43 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Nexperia |
| Unit Weight | 0.084199 oz |
| Product Type | MOSFET |
| Id - Continuous Drain Current | 100 A |
| Rds On - Drain-Source Resistance | 22.6 mOhms |
| RoHS | Y |
| Typical Turn-Off Delay Time | 87 ns |
| Subcategory | MOSFETs |
| Typical Turn-On Delay Time | 20 ns |
| Pd - Power Dissipation | 263 W |
| Rise Time | 35 ns |
| Technology | Si |
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