PSMN4R3-100ES,127
- Manufacturer Nexperia
- Part Number PSMN4R3-100ES,127
- Description MOSFET N-Ch 100V 4.3 m std level MOSFET
- Category MOSFET
Specifications
| Package | I2PAK-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Qg - Gate Charge | 170 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 63 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Nexperia |
| Unit Weight | 0.084199 oz |
| Number of Channels | 1 Channel |
| Product Type | MOSFET |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 120 A |
| Rds On - Drain-Source Resistance | 4.3 mOhms |
| RoHS | Y |
| Configuration | Single |
| Subcategory | MOSFETs |
| Pd - Power Dissipation | 338 W |
| Rise Time | 91 ns |
| Technology | Si |
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