PQMD12Z
- Manufacturer Nexperia
- Part Number PQMD12Z
- Description Bipolar Transistors - BJT NPN/PNP resistor equipped transistors
- Category Bipolar Transistors - BJT
Specifications
| Package | DFN-1010B-6 |
| Min. Pack | 1 |
| Emitter- Base Voltage VEBO | 10 V |
| Collector-Emitter Saturation Voltage | 50 V |
| Product Category | Bipolar Transistors - BJT |
| Transistor Polarity | NPN, PNP |
| Subcategory | Transistors |
| Product Type | BJTs - Bipolar Transistors |
| Brand | Nexperia |
| Maximum DC Collector Current | 100 mA |
| Gain Bandwidth Product fT | 230 MHz |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Pd - Power Dissipation | 230 mW |
| Mounting Style | SMD/SMT |
| Packaging | |
| Collector- Base Voltage VCBO | 50 V |
| Minimum Operating Temperature | - 55 C |
| Continuous Collector Current | 100 mA |
| Maximum Operating Temperature | + 150 C |
| DC Collector/Base Gain hfe Min | 80 |
| RoHS | Y |
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