PMST5550,135
- Manufacturer Nexperia
- Part Number PMST5550,135
- Description Bipolar Transistors - BJT TRANS HV TAPE-11
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-323-3 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 6 V |
| Width | 1.35 mm |
| Part # Aliases | /T3 PMST5550 |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | Nexperia |
| DC Current Gain hFE Max | 60 at 1 mA, 5 V |
| Unit Weight | 0.000176 oz |
| Collector- Emitter Voltage VCEO Max | 140 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Length | 2.2 mm |
| Qualification | AEC-Q101 |
| Maximum DC Collector Current | 0.3 A |
| RoHS | Y |
| Gain Bandwidth Product fT | 300 MHz |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Height | 1 mm |
| Packaging | |
| Collector- Base Voltage VCBO | 160 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 200 mW |
| DC Collector/Base Gain hfe Min | 60 at 1 mA, 5 V, 60 at 10 mA, 5 V, 20 at 50 mA, 5 V |
Need pricing on PMST5550,135?
Tell us your quantity and target price. We reply the same business day.