PMDT290UNEYL
- Manufacturer Nexperia
- Part Number PMDT290UNEYL
- Description MOSFET PMDT290UNE/SOT666/SOT6
- Category MOSFET
Specifications
| Package | SOT-666-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel, NPN |
| Rds On - Drain-Source Resistance | 290 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 500 mV |
| Qg - Gate Charge | 0.45 nC |
| Vgs - Gate-Source Voltage | 4.5 V |
| Fall Time | 31 ns |
| Product Category | MOSFET |
| Brand | Nexperia |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Id - Continuous Drain Current | 800 mA |
| Qualification | AEC-Q101 |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 86 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Mounting Style | SMD/SMT |
| Typical Turn-On Delay Time | 6 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 500 mW |
| Rise Time | 4 ns |
| Technology | Si |
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