PMD12K100
- Manufacturer Central Semiconductor
- Part Number PMD12K100
- Description Bipolar Transistors - BJT NPN 8.0A 100Vcev 100Vceo 2.0V 100W
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-3-2 |
| Packaging | Tray |
| Min. Pack | 200 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 5 V |
| Product Category | Bipolar Transistors - BJT |
| Brand | Central Semiconductor |
| DC Current Gain hFE Max | 20000 |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 4 MHz |
| Maximum DC Collector Current | 8 A |
| RoHS | Y |
| Continuous Collector Current | 8 A |
| Collector-Emitter Saturation Voltage | 2 V |
| Configuration | Single |
| Subcategory | Transistors |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 100 V |
| Pd - Power Dissipation | 100 W |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 1000 |
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