PMCM6501UPEZ
- Manufacturer Nexperia
- Part Number PMCM6501UPEZ
- Description MOSFET MOS Discretes WLCSP
- Category MOSFET
Specifications
| Package | WLCSP-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 900 mV |
| Qg - Gate Charge | 29 nC |
| Vgs - Gate-Source Voltage | 8 V |
| Fall Time | 55 ns |
| Product Category | MOSFET |
| Brand | Nexperia |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 22 S |
| Id - Continuous Drain Current | 7.3 A |
| Rds On - Drain-Source Resistance | 22 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 105 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Mounting Style | SMD/SMT |
| Typical Turn-On Delay Time | 6 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 12.5 W |
| Rise Time | 35 ns |
| Technology | Si |
Need pricing on PMCM6501UPEZ?
Tell us your quantity and target price. We reply the same business day.