PHE13009/DG,127
- Manufacturer WeEn Semiconductors
- Part Number PHE13009/DG,127
- Description Bipolar Transistors - BJT NPN POWER TRANSISTOR
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-220AB-3 |
| Min. Pack | 1 |
| Collector-Emitter Saturation Voltage | 0.32 V |
| Product Category | Bipolar Transistors - BJT |
| Transistor Polarity | NPN |
| Subcategory | Transistors |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Brand | WeEn Semiconductors |
| Maximum DC Collector Current | 12 A |
| DC Current Gain hFE Max | 40 |
| Unit Weight | 0.211644 oz |
| Collector- Emitter Voltage VCEO Max | 400 V |
| Pd - Power Dissipation | 80 W |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 700 V |
| Part # Aliases | 934065587127 |
| Configuration | Single |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 8 |
| RoHS | E |
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