PHE13003A,126
- Manufacturer WeEn Semiconductors
- Part Number PHE13003A,126
- Description Bipolar Transistors - BJT Single NPN 1A 2.1W
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-92-3 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 9 V |
| Part # Aliases | 934063927126 |
| Product Category | Bipolar Transistors - BJT |
| Brand | WeEn Semiconductors |
| DC Current Gain hFE Max | 30 |
| Unit Weight | 0.016000 oz |
| Collector- Emitter Voltage VCEO Max | 400 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Maximum DC Collector Current | 1 A |
| RoHS | Y |
| Continuous Collector Current | 1 A |
| Collector-Emitter Saturation Voltage | 0.4 V |
| Configuration | Single |
| Subcategory | Transistors |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 700 V |
| Pd - Power Dissipation | 2.1 W |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 5 |
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