PHB110NQ08T,118
- Manufacturer Nexperia
- Part Number PHB110NQ08T,118
- Description MOSFET TRENCH-75
- Category MOSFET
Specifications
| Package | TO-263-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 75 V |
| Transistor Polarity | N-Channel |
| Width | 9.4 mm |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | /T3 PHB110NQ08T |
| Fall Time | 100 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Nexperia |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 75 A |
| Length | 10.3 mm |
| Rds On - Drain-Source Resistance | 9 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 183 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Height | 4.5 mm |
| Packaging | |
| Typical Turn-On Delay Time | 35 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 230 W |
| Rise Time | 107 ns |
| Technology | Si |
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