PGA26E19BA
- Manufacturer Panasonic
- Part Number PGA26E19BA
- Description MOSFET MOSFET 600VDC 190mohm X-GaN
- Category MOSFET
Specifications
| Package | DFN-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Moisture Sensitive | Yes |
| Qg - Gate Charge | 2 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 2.4 ns |
| Product Category | MOSFET |
| Brand | Panasonic |
| Number of Channels | 1 Channel |
| Tradename | X-GaN |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 13 A |
| Rds On - Drain-Source Resistance | 190 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 3.4 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | PGA26E19BA |
| Mounting Style | SMD/SMT |
| Typical Turn-On Delay Time | 3.4 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 69 W |
| Rise Time | 5.2 ns |
| Technology | GaN |
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