PEMD3,315
- Manufacturer Nexperia
- Part Number PEMD3,315
- Description Bipolar Transistors - Pre-Biased TransDigital BJT NPN PNP 50V 200mW
- Category Bipolar Transistors - Pre-Biased
Specifications
| Package | SOT-666-6 |
| Min. Pack | 1 |
| Peak DC Collector Current | 100 mA |
| Transistor Polarity | NPN, PNP |
| Emitter- Base Voltage VEBO | 10 V |
| Width | 0.6 mm |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - Pre-Biased |
| DC Collector/Base Gain hfe Min | 30 |
| Unit Weight | 0.000099 oz |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Operating Temperature Range | - 65 C to + 150 C |
| Length | 1.7 mm |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Continuous Collector Current | 100 mA |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Subcategory | Transistors |
| Height | 0.6 mm |
| Packaging | |
| Collector- Base Voltage VCBO | 50 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 200 mW |
| Typical Resistor Ratio | 1 |
| Typical Input Resistor | 10 kOhms |
| Brand | Nexperia |
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