PD85006-E
- Manufacturer STMicroelectronics
- Part Number PD85006-E
- Description RF MOSFET Transistors RF Power Transistor LdmoST N-ch Plastic
- Category RF MOSFET Transistors
Specifications
| Package | PowerSO-10RF-Formed-4 |
| Packaging | Tube |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 15 V |
| Moisture Sensitive | Yes |
| Type | RF Power MOSFET |
| Mounting Style | SMD/SMT |
| Product Category | RF MOSFET Transistors |
| Brand | STMicroelectronics |
| Unit Weight | 0.105822 oz |
| Gain | 15 dB |
| Product Type | RF MOSFET Transistors |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 2 A |
| Output Power | 6 W |
| Operating Frequency | 1 GHz |
| RoHS | Y |
| Configuration | Single |
| Subcategory | MOSFETs |
| Series | PD85006-E |
| Pd - Power Dissipation | 36.5 W |
| Technology | Si |
Need pricing on PD85006-E?
Tell us your quantity and target price. We reply the same business day.