PBSS5580PA,115
- Manufacturer Nexperia
- Part Number PBSS5580PA,115
- Description Bipolar Transistors - BJT 80V 4A PNP LO VCEsat TRANSISTOR
- Category Bipolar Transistors - BJT
Specifications
| Package | DFN-2020-3 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 7 V |
| Width | 2.1 mm |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | Nexperia |
| DC Current Gain hFE Max | 265 |
| Collector- Emitter Voltage VCEO Max | - 80 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Length | 2.1 mm |
| Maximum DC Collector Current | - 5 A |
| RoHS | Y |
| Continuous Collector Current | - 4 A |
| Gain Bandwidth Product fT | 110 MHz |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Height | 0.61 mm |
| Packaging | |
| Collector- Base Voltage VCBO | - 80 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.1 W |
| DC Collector/Base Gain hfe Min | 70 |
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