PBSS5220V,115
- Manufacturer Nexperia
- Part Number PBSS5220V,115
- Description Bipolar Transistors - BJT LO VCESAT(BISS)TRANS TAPE-7
- Category Bipolar Transistors - BJT
Specifications
| Package | SSmini-6 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 5 V |
| Width | 1.3 mm |
| Part # Aliases | PBSS5220V T/R |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | Nexperia |
| DC Current Gain hFE Max | 220 at 1 mA, 2 V |
| Unit Weight | 0.000212 oz |
| Collector- Emitter Voltage VCEO Max | 20 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Length | 1.7 mm |
| Qualification | AEC-Q101 |
| Maximum DC Collector Current | 2 A |
| RoHS | Y |
| Gain Bandwidth Product fT | 185 MHz |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Height | 0.6 mm |
| Packaging | |
| Collector- Base Voltage VCBO | 20 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 900 mW |
| DC Collector/Base Gain hfe Min | 220 at 1 mA, 2 V, 220 at 100 mA, 2 V, 220 at 500 mA, 2 V, 155 at 1 A, 2 V, 60 at 2 A, 2 V |
Need pricing on PBSS5220V,115?
Tell us your quantity and target price. We reply the same business day.