NXH80T120L2Q0S1G
- Manufacturer ON Semiconductor
- Part Number NXH80T120L2Q0S1G
- Description IGBT Modules PIM 1200V 80A TNPC CUST T-TYPE MODULE
- Category IGBT Modules
Specifications
| Package | Q0PACK |
| Packaging | Tray |
| Min. Pack | 24 |
| Gate-Emitter Leakage Current | 200 nA, 300 nA |
| Product | IGBT Silicon Modules |
| Product Category | IGBT Modules |
| Subcategory | IGBTs |
| Mounting Style | Press Fit |
| Technology | Si |
| Brand | ON Semiconductor |
| Continuous Collector Current at 25 C | 49 A, 67 A |
| Collector-Emitter Saturation Voltage | 1.4 V, 2.05 V |
| Collector- Emitter Voltage VCEO Max | 600 V, 1200 V |
| Maximum Gate Emitter Voltage | 20 V |
| Product Type | IGBT Modules |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 158 W |
| Configuration | T-Type |
| Maximum Operating Temperature | + 150 C |
| RoHS | Y |
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