NX2301PVL
- Manufacturer Nexperia
- Part Number NX2301PVL
- Description MOSFET NX2301P/TO-236AB/REEL 11" Q3/T
- Category MOSFET
Specifications
| Package | SOT-23-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | P-Channel |
| Rds On - Drain-Source Resistance | 120 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 500 mV |
| Qg - Gate Charge | 4.5 nC |
| Vgs - Gate-Source Voltage | 4.5 V |
| Fall Time | 25 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Nexperia |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel Trench MOSFET |
| Id - Continuous Drain Current | 2 A |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 50 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 7 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 710 mW |
| Rise Time | 15 ns |
| Technology | Si |
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