Solve the future +1 910-626-85255 contact@business.com

NVMFS6H800NLWFT1G

  • Manufacturer ON Semiconductor
  • Part Number NVMFS6H800NLWFT1G
  • Description MOSFET T8 80V LL NFET
  • Category MOSFET
Specifications
Package DFN-5
Packaging Reel
Min. Pack 1,500
Vds - Drain-Source Breakdown Voltage 80 V
Transistor Polarity N-Channel
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 112 nC
Vgs - Gate-Source Voltage 20 V
Fall Time 163 ns
Mounting Style SMD/SMT
Product Category MOSFET
Brand ON Semiconductor
Number of Channels 1 Channel
Configuration Single
Maximum Operating Temperature + 175 C
Transistor Type 1 N-Channel
Forward Transconductance - Min 250 S
Id - Continuous Drain Current 224 A
Rds On - Drain-Source Resistance 1.9 mOhms
RoHS Y
Product Type MOSFET
Typical Turn-Off Delay Time 118 ns
Subcategory MOSFETs
Channel Mode Enhancement
Typical Turn-On Delay Time 20 ns
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 214 W
Rise Time 153 ns
Technology Si

Need pricing on NVMFS6H800NLWFT1G?

Tell us your quantity and target price. We reply the same business day.