NVMFS5H663NLT1G
- Manufacturer ON Semiconductor
- Part Number NVMFS5H663NLT1G
- Description MOSFET T8 60V LOW COSS
- Category MOSFET
Specifications
| Package | DFN-5 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 7.2 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Qg - Gate Charge | 17 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 9.5 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 64 S |
| Id - Continuous Drain Current | 67 A |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 26.2 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 13.4 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 63 W |
| Rise Time | 52.7 ns |
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