NVMFS5C410NAFT1G
- Manufacturer ON Semiconductor
- Part Number NVMFS5C410NAFT1G
- Description MOSFET T6-D3F 40V NFET
- Category MOSFET
Specifications
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 760 uOhms |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 86 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 173 ns |
| Product Category | MOSFET |
| Brand | ON Semiconductor |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 190 S |
| Id - Continuous Drain Current | 300 A |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 227 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 54 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 166 W, 3.9 W |
| Rise Time | 162 ns |
| Technology | Si |
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