NVMFD5C680NLT1G
- Manufacturer ON Semiconductor
- Part Number NVMFD5C680NLT1G
- Description MOSFET T6 60V LL S08FL DS
- Category MOSFET
Specifications
| Package | DFN-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 23 mOhms, 23 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Qg - Gate Charge | 5 nC, 5 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 23 ns, 23 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 50 S, 50 S |
| Id - Continuous Drain Current | 26 A |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 13 ns, 13 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | NVMFD5C680NL |
| Packaging | |
| Typical Turn-On Delay Time | 6.4 ns, 6.4 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 19 W |
| Rise Time | 25 ns, 25 ns |
| Technology | Si |
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