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NVMFD5875NLT1G

  • Manufacturer ON Semiconductor
  • Part Number NVMFD5875NLT1G
  • Description MOSFET NFET SO8FL 60V 22A 3
  • Category MOSFET
Specifications
Package DFN-5x6-8
Min. Pack 1
Vds - Drain-Source Breakdown Voltage 60 V
Transistor Polarity N-Channel
Rds On - Drain-Source Resistance 27 mOhms, 27 mOhms
Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 20 nC, 20 nC
Vgs - Gate-Source Voltage 20 V
Fall Time 2.4 ns, 2.4 ns
Mounting Style SMD/SMT
Product Category MOSFET
Brand ON Semiconductor
Unit Weight 0.004797 oz
Number of Channels 2 Channel
Configuration Dual
Maximum Operating Temperature + 175 C
Transistor Type 2 N-Channel
Forward Transconductance - Min 7 S, 7 S
Id - Continuous Drain Current 22 A
Qualification AEC-Q101
RoHS Y
Product Type MOSFET
Typical Turn-Off Delay Time 14.5 ns, 14.5 ns
Subcategory MOSFETs
Channel Mode Enhancement
Packaging
Typical Turn-On Delay Time 4.9 ns, 4.9 ns
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 32 W
Rise Time 6.4 ns, 6.4 ns
Technology Si

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