NVD5C478NLT4G
- Manufacturer ON Semiconductor
- Part Number NVD5C478NLT4G
- Description MOSFET T6 40V DPAK EXP
- Category MOSFET
Specifications
| Package | DPAK-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 7.7 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Qg - Gate Charge | 20 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 3 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Forward Transconductance - Min | 45 S |
| Id - Continuous Drain Current | 45 A |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 21 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 7 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 30 W |
| Rise Time | 16 ns |
| Technology | Si |
Need pricing on NVD5C478NLT4G?
Tell us your quantity and target price. We reply the same business day.