NVATS4A101PZT4G
- Manufacturer ON Semiconductor
- Part Number NVATS4A101PZT4G
- Description MOSFET Power MOSFET P-Chann -30 V
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | P-Channel |
| Rds On - Drain-Source Resistance | 23 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 2.6 V |
| Qg - Gate Charge | 18.5 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 70 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor |
| Unit Weight | 0.011993 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 17 S |
| Id - Continuous Drain Current | 27 A |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 80 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 9.2 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 36 W |
| Rise Time | 70 ns |
| Technology | Si |
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