NUS5530MNR2G
- Manufacturer ON Semiconductor
- Part Number NUS5530MNR2G
- Description MOSFET INTEGRATED POWER BJT
- Category MOSFET
Specifications
| Package | DFN-8 |
| Packaging | Reel |
| Min. Pack | 3,000 |
| Vgs - Gate-Source Voltage | 35 V |
| Product Category | MOSFET |
| Transistor Polarity | P-Channel |
| Subcategory | MOSFETs |
| Series | NUS5530MN |
| Brand | ON Semiconductor |
| Id - Continuous Drain Current | 3.9 A |
| Product | MOSFET Small Signal |
| Pd - Power Dissipation | 635 mW |
| Mounting Style | SMD/SMT |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Unit Weight | 0.001319 oz |
| Rds On - Drain-Source Resistance | 200 Ohms |
| Product Type | MOSFET |
| Technology | Si |
| Forward Transconductance - Min | 12 S |
| RoHS | Y |
Need pricing on NUS5530MNR2G?
Tell us your quantity and target price. We reply the same business day.