NTZD5110NT1G
- Manufacturer ON Semiconductor
- Part Number NTZD5110NT1G
- Description MOSFET SMALL SIGNAL MOSFET 60V 310mA DUAL N-CH
- Category MOSFET
Specifications
| Package | SOT-563-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Width | 1.2 mm |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 7.3 ns |
| Mounting Style | SMD/SMT |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Brand | ON Semiconductor |
| Unit Weight | 0.000106 oz |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Id - Continuous Drain Current | 294 mA |
| Length | 1.6 mm |
| Rds On - Drain-Source Resistance | 1.6 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 63.7 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | NTZD5110N |
| Height | 0.55 mm |
| Packaging | |
| Typical Turn-On Delay Time | 12 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 250 mW |
| Rise Time | 7.3 ns |
| Technology | Si |
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