NTUD3170NZT5G
- Manufacturer ON Semiconductor
- Part Number NTUD3170NZT5G
- Description MOSFET 20V Trench N-Channel
- Category MOSFET
Specifications
| Package | SOT-963-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 400 mV |
| Width | 0.8 mm |
| Vgs - Gate-Source Voltage | 4.5 V |
| Type | Small Signal MOSFET |
| Fall Time | 80 ns |
| Mounting Style | SMD/SMT |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Brand | ON Semiconductor |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 0.48 S |
| Id - Continuous Drain Current | 220 mA |
| Length | 1 mm |
| Rds On - Drain-Source Resistance | 1.5 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 142 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | NTUD3170NZ |
| Height | 0.37 mm |
| Packaging | |
| Typical Turn-On Delay Time | 16.5 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 125 mW |
| Rise Time | 25.5 nd |
| Technology | Si |
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