NTMD6P02R2G
- Manufacturer ON Semiconductor
- Part Number NTMD6P02R2G
- Description MOSFET 20V 6A P-Channel
- Category MOSFET
Specifications
| Package | SOIC-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | P-Channel |
| Width | 4 mm |
| Vgs - Gate-Source Voltage | 12 V |
| Type | MOSFET |
| Fall Time | 80 ns, 50 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor |
| Unit Weight | 0.006596 oz |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 P-Channel |
| Forward Transconductance - Min | 15 S |
| Id - Continuous Drain Current | 7.8 A |
| Length | 5 mm |
| Rds On - Drain-Source Resistance | 27 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 50 ns, 85 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | NTMD6P02 |
| Height | 1.5 mm |
| Packaging | |
| Typical Turn-On Delay Time | 17 ns, 15 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2 W |
| Rise Time | 65 ns, 20 ns |
| Technology | Si |
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