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NTLGF3501NT2G

  • Manufacturer ON Semiconductor
  • Part Number NTLGF3501NT2G
  • Description MOSFET NFET 3X3 20V 3.0A 9MOHM
  • Category MOSFET
Specifications
Package DFN-6
Min. Pack 1
Vds - Drain-Source Breakdown Voltage 20 V
Transistor Polarity N-Channel
Width 1.6 mm
Moisture Sensitive Yes
Vgs - Gate-Source Voltage 20 V
Fall Time 13.6 ns
Mounting Style SMD/SMT
Product MOSFET Small Signal
Product Category MOSFET
Brand ON Semiconductor
Unit Weight 0.000744 oz
Number of Channels 1 Channel
Configuration Single
Maximum Operating Temperature + 150 C
Transistor Type 1 N-Channel
Forward Transconductance - Min 6.7 S
Id - Continuous Drain Current 5.8 A
Length 2.69 mm
Rds On - Drain-Source Resistance 9 mOhms
RoHS Y
Product Type MOSFET
Typical Turn-Off Delay Time 9 ns
Subcategory MOSFETs
Channel Mode Enhancement
Series NTLGF3501N
Height 1.12 mm
Packaging
Typical Turn-On Delay Time 4.8 ns
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 1.74 W
Rise Time 13.6 ns
Technology Si

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