NTJD4158CT2G
- Manufacturer ON Semiconductor
- Part Number NTJD4158CT2G
- Description MOSFET PFET 20V .88A 1OHM
- Category MOSFET
Specifications
| Package | SOT-363-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V, 20 V |
| Transistor Polarity | N-Channel, P-Channel |
| Width | 1.25 mm |
| Vgs - Gate-Source Voltage | 20 V, 12 V |
| Type | Small Signal |
| Fall Time | 66 ns, 6.5 ns |
| Mounting Style | SMD/SMT |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Brand | ON Semiconductor |
| Unit Weight | 0.000265 oz |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Forward Transconductance - Min | 0.08 S / 3 S |
| Id - Continuous Drain Current | 250 mA |
| Length | 2 mm |
| Rds On - Drain-Source Resistance | 215 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 56 ns, 13.5 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Height | 0.9 mm |
| Packaging | |
| Typical Turn-On Delay Time | 15 ns, 5.8 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 270 mW |
| Rise Time | 66 ns, 6.5 ns |
| Technology | Si |
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