NTHL080N120SC1
- Manufacturer ON Semiconductor
- Part Number NTHL080N120SC1
- Description MOSFET SIC MOS 80MW 1200V
- Category MOSFET
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 1200 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.8 V |
| Qg - Gate Charge | 56 nC |
| Vgs - Gate-Source Voltage | - 15 V, 25 V |
| Fall Time | 8 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | ON Semiconductor |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 13 S |
| Id - Continuous Drain Current | 44 A |
| Rds On - Drain-Source Resistance | 110 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 28 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time | 6.2 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 348 W |
| Rise Time | 5.8 ns |
| Technology | SiC |
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