NTHD4P02FT1G
- Manufacturer ON Semiconductor
- Part Number NTHD4P02FT1G
- Description MOSFET -20V -3A P-Channel w/3A Schottky
- Category MOSFET
Specifications
| Package | ChipFET-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | P-Channel |
| Width | 1.65 mm |
| Vgs - Gate-Source Voltage | 12 V |
| Type | MOSFET |
| Fall Time | 13 ns |
| Mounting Style | SMD/SMT |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Brand | ON Semiconductor |
| Unit Weight | 0.002998 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 5 S |
| Id - Continuous Drain Current | 3 A |
| Length | 3.05 mm |
| Rds On - Drain-Source Resistance | 200 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 33 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | NTHD4P02 |
| Height | 1.05 mm |
| Packaging | |
| Typical Turn-On Delay Time | 7 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.1 W |
| Rise Time | 13 ns |
| Technology | Si |
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